Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Agache V, Legrand B, Collard D, Fujita H, Buchaillot L (2005) 1.1 GHz silicon blade nano-electromechanical resonator featuring 20 nm gap lateral transducers. In: 18th IEEE international conference on micro electro mechanical systems (MEMS 2005: Technical Digest). Miami, pp 121–124
2. Chang W-T, Wang C-C, Lin J-A, Yeh W-K (2010) External stresses on tensile and compressive contact etching stop layer SOI MOSFETs. IEEE Trans Electron Dev 57(8):1889–1894
3. Huiquan W (2008) Study of NEMS resonator based on field effect transistor detection. [M]PhD Thesis Zhejiang University
4. Lochtefeld A, Antoniadis DA (2001) Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress. IEEE Electron Dev Lett 22(12):591–593
5. Moselund KE, Najmzadeh M, Dobrosz P, Olsen SH, Bouvet D, De Michielis L, Pott V, Ionescu AM (2010) The high-mobility bended n-channel silicon nanowire transistor. IEEE Trans Electron Devices 57(4):866–876