Laser annealing of GaAs dual implanted with Si and P ions

Author:

Rybka V.,Odzhayev V.,Červená J.,Hnatowicz V.,Kvítek J.,Jelínková H.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Reference8 articles.

1. Abrayan I. A.: Fizika i tekhnika poluprovodnikov13 (1979) 227.

2. Liu S. G., Douglas E. C., Wu C. P., Magee C. W., Narayan S. Y., Jolly S. T., Kolondra F., Jain S.: RCA Review41 (1980) 227.

3. Campisano S. V., Foti G., Rimini E., Eisen F. H., Tseng W. T., Nicolet M. A., Tanbon J. L.: J. Appl. Phys.51 (1980) 295.

4. Foti G.: Nucl. Instrum. & Methods182/183 (1981) 573.

5. Feldman L. C., Mayer J. W., Picraux S. T.: Material Analysis by Ion Channeling. Academic Press, New York, 1982.

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. TEM study of ion implanted GaAs after pulsed electron beam annealing;Radiation Effects and Defects in Solids;1993-03

2. Pulsed-electron-beam annealing of ion implanted GaAs;Materials Science and Engineering: B;1991-07

3. Double Implantation in GaAs;MRS Proceedings;1990

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