Nitrogen-oxygen complexes in Czochralski-silicon-Reference-Cited by-同舟云学术

Nitrogen-oxygen complexes in Czochralski-silicon

Published:1988-06 Issue:2 Volume:46 Page:73-76
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Wagner P.,Oeder R.,Zulehner W.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00615911.pdf

Reference8 articles.

1. T. Abe, K. Kikuchi, S. Shirai, S. Murako: InSemiconductor Silicon 1981 (The Electrochemical Society, Inc., Pennington, N.J. 1981) p. 54

2. M. Watanabe, T. Usami, H. Muraoka, S. Matsuo, Y. Imanishi, H. Nagashima: InSemiconductor Silicon 1981 (The Electrochemical Society, Inc., Pennington, N.J. 1981) p. 126

3. H.J. Stein: In13 th Int. Conf. on Defects in Semiconductors (The Metallurgical Society of American Inst. of Mining, Metallurgical and Petroleum Engineers (AIME), Warrendale, PA 1985)14a, 839

4. Y. Itoh, T. Nozaki, T. Masui, T. Abe: Appl. Phys. Lett.57, 488 (1987)

5. R.J. Elliot, P. Pfeuty: J. Phys. Chem. Sol.28, 1789 (1967)

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