Multiple stacking of InGaAs/GaAs (731) nanostructures-Reference-Cited by-同舟云学术

Multiple stacking of InGaAs/GaAs (731) nanostructures

Published:2009-10-15 Issue:1 Volume:1 Page:1-3
ISSN:2311-6706
Container-title:Nano-Micro Letters
language:en
Short-container-title:Nano-Micro Lett.

Author:

Xie Y. Z.,Kunets V. P.,Wang Z. M.,Dorogan V.,Mazur Y. I.,Wu J.,Salamo G. J.

Abstract

Abstract We studied the multilayering effects of InGaAs quantum dots (QDs) on GaAs(731), a surface lying inside of the stereographic triangle. The surfaces after stacking 16 InGaAs layers were characterized with highly non-uniformity of QD spatial distribution. The bunched step regions driven by strain accumulation are decorated by QDs, therefore GaAs(731) becomes a good candidate substrate for the growth of QD clusters. The unique optical properties of the QD clusters are revealed by photoluminescence measurements. By adjusting the coverage of InGaAs, a bamboo-like nanostructured surface was observed and the quantum dots aligned up in clusters to separate the “bamboo” into sections.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/BF03353596.pdf

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