Influence of copper impurity and structure defects on the properties of compound CdSnAs2-Reference-Cited by-同舟云学术

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Influence of copper impurity and structure defects on the properties of compound CdSnAs2

Published:1980-05 Issue:5 Volume:23 Page:448-453
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Voevodina O. V.,Vyatkin A. P.,Vedernikova T. V.,Voevodin V. G.,Krivov M. A.,Otman Ya. I.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00891640.pdf

Reference9 articles.

1. V. D. Prochukhan, in: Ternary AIIBIVC 2 V and AIIB 2 III C 4 VI Semiconductors [in Russian], Shtnintsa, Kishinev (1972), p. 64.

2. O. V. Voevodina, A. P. Vyatkin, V. G. Voevodin, Ya. I. Otman, and V. L. Otts, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 7, 39 (1973).

3. F. A. Kröger, The Chemistry of Imperfect Crystals, North-Holland, Amsterdam; Wiley, New York (1964).

4. G. A. Polyanskaya and Yu. V. Shmartsev, Fiz. Tekh. Poluprovodn.,4, 727 (1970).

5. B. M. Askerov, Transport Effects in Semiconductors [in Russian], Nauka, Leningrad (1970).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The behaviour of in-diffused copper in n-type CdSnAs2;Materials Science in Semiconductor Processing;2003-10

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