Formation of nanosized relief on PbTe and Pb1−xSnxTe substrates surface during nonabrasive chemical–mechanical polishing by (H2O2 + HBr + ethylene glycol)/glycerol etchant compositions

Author:

Malanych G. P.ORCID,Tomashyk V. M.,Korchovyi A. A.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Cell Biology,Physical and Theoretical Chemistry,Materials Science (miscellaneous),Atomic and Molecular Physics, and Optics,Biotechnology

Reference8 articles.

1. Bochkin OI et al (1983) Mechanical treatment of semiconductor materials. Vysshaya Shkola Publish, Moscow (in Russian)

2. Kurnosov VI, Yudin VV (1986) The technology of production of semiconductor devices and integrated microchips. Vysshaya Shkola Publish, Moscow (in Russian)

3. Malanych GP et al (2013) Chemical–mechanical polishing of single crystals of PbTe and Pb1–xSnxTe solid solutions in H2O2–HBr–ethylene glycol etchants (in Ukrainian). Nauk Visn Chernivtsi Nats Univ Khim 640:72–78

4. Malanych GP et al (2014) Etching behavior of PbTe and Pb1−xSnxTe crystal surfaces in aqueous H2O2–HBr–tartaric acid solutions. Inorg Mater 50(7):661–666. https://doi.org/10.1134/S0020168514070097

5. Osipova EV et al (1991) The investigation of damaged layers on the surface of lead telluride single crystals after different methods of cutting (in Russian). Neorg Mater 27(6):1200–1203

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