Electronic properties and charge control of δ-doped GaAs/Al0.3Ga0.7As and In0.53Ga0.47As/InP core–shell nanowires
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Cell Biology,Physical and Theoretical Chemistry,Materials Science (miscellaneous),Atomic and Molecular Physics, and Optics,Biotechnology
Link
http://link.springer.com/article/10.1007/s13204-014-0360-z/fulltext.html
Reference17 articles.
1. Bertoni A, Royo M, Mahawish F, Goldoni G (2011) Electron and hole gas in modulation-doped GaAs/Al1-xGaxAs radial heterojunctions. Phys Rev B 84:205323
2. Björk MT, Ohlsson BJ, Thelander C, Persson AI et al (2002) Nanowire resonant tunneling diodes. Appl Phys Lett 81:4458
3. Harrison P, Quantum wells, Wires and Dots. ISBN 0470010819
4. Heigoldt M et al (2009) Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires. J Mater Chem 19:840
5. Ke ML, Chen X, Zervos M, Nawaz R, Elliott M (1996) Optical and electrical properties of selectively δ-doped strained InXGa1-xAs/GaAs quantum wells. J. Appl Phy 79:2627
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