Efficient and Reliable Nanoindentation Simulation by Dislocation Loop Erasing Method

Abstract

Abstract Nanoindentation is a useful technique to measure material properties at microscopic level. However, the intrinsically multiscale nature makes it challenging for large-scale simulations to be carried out. It is shown that in molecular statics simulations of nanoindentation, the separated dislocation loops (SDLs) are trapped in simulation box which detrimentally affects the plastic behavior in the plastic zone (PZ); and the long-distance propagation of SDLs consumes much computational cost yet with little contribution to the variation of tip force. To tackle the problem, the dislocation loop erasing (DLE) method is proposed in the work to alleviate the influence of artificial boundary conditions on the SDL–PZ interaction and improve simulation efficiency. Simulation results indicate that the force–depth curves obtained from simulations with and without DLE are consistent with each other, while the method with DLE yields more reasonable results of microstructural evolution and shows better efficiency. The new method provides an alternative approach for large-scale molecular simulation of nanoindentation with reliable results and higher efficiency and also sheds lights on improving existing multiscale methods.