GSMAC-FEM analysis of single-crystal growth by cusp MCZ method
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering
Link
http://link.springer.com/content/pdf/10.1007/BF03185147.pdf
Reference10 articles.
1. Dold, P., et al, 2001, “Floating Zone Growth of Silicon in Magnetic Fields: IV. Rotating Magnetic Fields,”J. Crystal Growth, Vol. 231, pp. 95–106.
2. Evstratov, I. Yu., et al, 2001, “Modeling Analysis of Unsteady Three-Dimensional Turbulent Melt Flow during Czochralski Growth of Si Crystals,“ J. Crystal Growth, Vol. 230, pp. 22–29.
3. Kakimoto, K., Eguchi, M. and Ozoe, H., 1997, “Use of an Inhomogeneous Magnetic Field for Silicon Crystal Growth,”J. Crystal Growth, Vol. 180, pp. 442–449.
4. Lan, C. W., Chian, J. H., 2001, “Three-Dimensional Simulation of Marangoni Flow and Interfaces in Floating-Zone Silicon Crystal Growth,”J. Crystal Growth, Vol. 230, pp. 172–180.
5. Lee, Y. -S., Chun, Ch. -H., 1997, “Experiments on the Oscillatory Convection of Low Prandtl Number Liquid in Czochralski Configuration for Crystal Growth with Cusp Magnetic Field,”J. Crystal Growth, Vol. 180, pp. 477–486.
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