Author:
Zhang Qianru,Tu Bin,Fang Qiaojun,Lu Benzhuo
Funder
National Key Research and Development Program of Ministry of Science and Technology
National Natural Science Foundation of China
Strategic Priority Research Program of the Chinese Academy of Sciences
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Computational Mathematics
Reference41 articles.
1. Ambrosio, L., Gigli, N., Savaré, G.: Gradient flows: in metric spaces and in the space of probability measures. Springer, Berlin (2008)
2. Brezzi, F., Marini, L.D., Pietra, P.: Numerical simulation of semiconductor devices. Comput. Methods Appl. Mech. Eng. 75(1–3), 493–514 (1989)
3. Brunk, M., Kværnø, A.: Positivity preserving discretization of time dependent semiconductor drift-diffusion equations. Appl. Num. Math. 62(10), 1289–1301 (2012)
4. Buturla, E., Cottrell, P., Grossman, B., Salsburg, K.: Finite-element analysis of semiconductor devices: the fielday program. IBM J. Res. Develop. 25(4), 218–231 (1981)
5. Cancès, C., Gallouët, T.O., Todeschi, G.: A variational finite volume scheme for Wasserstein gradient flows. Numerische Mathematik 146(3), 437–480 (2020)
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献