Line defects in monolayer TiSe2 with adsorption of Pt atoms potentially enable excellent catalytic activity-Reference-Cited by-同舟云学术

Line defects in monolayer TiSe2 with adsorption of Pt atoms potentially enable excellent catalytic activity

Published:2021-12-18 Issue: Volume: Page:
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Song Zhipeng,Yi Juxia,Qi Jing,Zheng Qi,Zhu Zhili,Tao Lei,Cao Yun,Li Yan,Gao Zhaoyan,Zhang Ruizi,Huang Li,Li Geng,Xu Ziqiang,Wu Xu,Wang Yeliang,Shen Chengmin,Zhang Yu-Yang,Lu Hongliang,Lin Xiao,Du Shixuan,Gao Hong-Jun

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1007/s12274-021-4002-y.pdf

Reference47 articles.

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2. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L. J.; Loh, K. P.; Zhang, H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 2013, 5, 263–275.

3. Tian, H.; Chin, M. L.; Najmaei, S.; Guo, Q. S.; Xia, F. N.; Wang, H.; Dubey, M. Optoelectronic devices based on two-dimensional transition metal dichalcogenides. Nano Res. 2016, 9, 1543–1560.

4. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699–712.

5. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.

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