Bandgap broadening at grain boundaries in single-layer MoS2-Reference-Cited by-同舟云学术

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Bandgap broadening at grain boundaries in single-layer MoS2

Published:2018-07-07 Issue:11 Volume:11 Page:6102-6109
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Wang Dongfei,Yu Hua,Tao Lei,Xiao Wende,Fan Peng,Zhang Tingting,Liao Mengzhou,Guo Wei,Shi Dongxia,Du Shixuan,Zhang Guangyu,Gao Hongjun

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/article/10.1007/s12274-018-2128-3/fulltext.html

Reference37 articles.

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669.

2. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.

3. Cheng, Y. C.; Yao, K. X.; Yang, Y.; Li, L.; Yao, Y. B.; Wang, Q. X.; Zhang, X. X.; Han, Y.; Schwingenschlögl, U. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition. RSC Adv. 2013, 3, 17287–17293.

4. Dumcenco, D.; Ovchinnikov, D.; Marinov, K.; Lazić, P.; Gibertini, M.; Marzari, N.; Sanchez, O. L.; Kung, Y. C.; Krasnozhon, D.; Chen, M. W. et al. Large-area epitaxial monolayer MoS2. ACS Nano 2015, 9, 4611–4620.

5. Fu, L.; Sun, Y. Y.; Wu, N.; Mendes, R. G.; Chen, L. F.; Xu, Z.; Zhang, T.; Rummeli, M. H.; Rellinghaus, B.; Pohl, D. et al. Direct growth of MoS2/h-BN heterostructures via a sulfide-resistant alloy. ACS Nano 2016, 10, 2063–2070.

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