Thermal conduction across the one-dimensional interface between a MoS2 monolayer and metal electrode-Reference-Cited by-同舟云学术

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Thermal conduction across the one-dimensional interface between a MoS2 monolayer and metal electrode

Published:2016-06-02 Issue:8 Volume:9 Page:2372-2383
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Liu Xiangjun,Zhang Gang,Zhang Yong-Wei

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/s12274-016-1124-8.pdf

Reference60 articles.

1. Fiori, G.; Bonaccorso, F.; Iannaccone, G.; Palacios, T.; Neumaier, D.; Seabaugh, A.; Banerjee, S. K.; Colombo, L. Electronics based on two-dimensional materials. Nat. Nanotechnol. 2014, 9, 768–779.

2. Radisavljevic, B.; Kis, A. Mobility engineering and a metal–insulator transition in monolayer MoS2. Nat. Mater. 2013, 12, 815–820.

3. Cheng, R.; Jiang, S.; Chen, Y.; Liu, Y.; Weiss, N.; Cheng, H.-C.; Wu, H.; Huang, Y.; Duan, X. F. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 2014, 5, 5143.

4. Najmaei, S.; Liu, Z.; Zhou, W.; Zou, X. L.; Shi, G.; Lei, S. D.; Yakobson, B. I.; Idrobo, J.-C.; Ajayan, P. M.; Lou, J. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater. 2013, 12, 754–759.

5. Qiu, H.; Pan, L. J.; Yao, Z. N.; Li, J. J.; Shi, Y.; Wang, X. R. Electrical characterization of back-gated bi-layer MoS2 fieldeffect transistors and the effect of ambient on their performances. Appl. Phys. Lett. 2012, 100, 123104.

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