Photothermal ionization spectroscopy for shallow impurities in ultra-pure silicon-Reference-Cited by-同舟云学术

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Photothermal ionization spectroscopy for shallow impurities in ultra-pure silicon

Published:1990-05 Issue:5 Volume:11 Page:595-630
ISSN:0195-9271
Container-title:International Journal of Infrared and Millimeter Waves
language:en
Short-container-title:Int J Infrared Milli Waves

Author:

Shen S. C.,Yu Z. Y.,Huang Y. X.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/BF01023764.pdf

Reference25 articles.

1. A.G. Milnes, Deep Impurities in Semiconducts Wiley (1973).

2. S.C. Shen. Progress in Physics,4, 452 (1984).

3. M. Altarelli and F. Bassani, in ?Handbook on Semiconductors? ed. by T.S. Moss, North-Holland, Vol. 1, p269 (1980).

4. B. Pajot, J. Kauppinen and R. Anttila, Solid State Commun.,31, 759 (1979).

5. N.R. Butter, P. Fisher, A.K. Ramdas, Phys. Rev.,B12, 3220 (1975).

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