Characterization of GaAs epitaxial layers and diode chips for microwave device purposes-Reference-Cited by-同舟云学术

Characterization of GaAs epitaxial layers and diode chips for microwave device purposes

Published:1978-01 Issue:1 Volume:44 Page:79-89
ISSN:0001-6705
Container-title:Acta Physica Academiae Scientiarum Hungaricae
language:en
Short-container-title:Acta Physica

Author:

Pődör B.,Mojzes I.,Szentpáli B.

Publisher

Springer Science and Business Media LLC

Subject

Nuclear and High Energy Physics

Link

http://link.springer.com/content/pdf/10.1007/BF03157222.pdf

Reference25 articles.

1. B. Pődör, N. Nádor andI. Bertóti, Investigation of the electrical properties of epitaxial GaAs layers for microwave devices, Proc. 5th Coll. Microwave Comm., Budapest, June 24–30, 1974, Publishing House of the Hung. Acad. Sci., Vol. 5., p. 279.

2. I. Mojzes, B. Szentpáli, I. Bertóti andB. Pődör, Measurement of electron concentration and mobility of n−n+ epitaxial layers grown for Gunn diodes, Ibid., Proc. 5th Coll. Microwave Comm., Budapest, June 24–30, 1974, Publishing House of the Hung. Acad. Sci., Vol. 5., p. 233.

3. L. Gútai andI. Mojzes, Appl. Phys. Lett.,26, 325, 1975.

4. A. Andrási, Á. Barna, B. P. Barna, F. Beleznay, I. Mojzes, B. Pődör, T. Sebestyén, Gy. Stark, B. Szentpáli, I. Szép, GaAs Gunn diodes for the frequency range of 7–10 GHz, Híradástechnika, Budapest,28, 42, 1977 (in Hungarian).

5. B. Pődör, N. Nádor andI. Bertóti, phys. stat. sol. (a)29, 173, 1975.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the self-compensation of donors in liquid phase epitaxial GaAs;Acta Physica Academiae Scientiarum Hungaricae;1980-04

2. Electrical modelling of ohmic contacts formation on metal-n-GaAs systems;Acta Physica Academiae Scientiarum Hungaricae;1980-04