Internal structure of insulating and semiconducting synthetic diamonds-Reference-Cited by-同舟云学术

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Internal structure of insulating and semiconducting synthetic diamonds

Published:1973-01 Issue:1 Volume:8 Page:88-92
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Kirk Robert S.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00755586.pdf

Reference7 articles.

1. See, for example,E. M. Wilks andJ. Wilks,Industrial Diamond Review 26 (1966) 52.

2. E. M. Wilks andJ. Wilks, Proceedings of the International Industrial Diamond Conference, Oxford, England, Volume One, Ed. John Burls, Industrial Diamond Information Bureau, London (1967) pp. 93?103.

3. Yu Litvin andV. P. Butuzov,Dolakady 181 (1968) 1123.

4. V. I. Shemanin,Geologiya i Geogizika 11 (1966) 116.

5. R. M. Chrenko, H. M. Strong, andR. E. Tuft,Phil. Mag. 23 (1971) 313.

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1. Micro-scale abrasion investigations of single-crystal diamonds using nano-polycrystalline diamond wheels;Diamond and Related Materials;2022-06

2. Topographic methods for studying defects in diamonds;Diamond and Related Materials;1993-03

3. Orientation-dependent nitrogen incorporation on vicinals on synthetic diamond cube growth surfaces;Journal of Crystal Growth;1990-03

4. On the dodecahedral growth of coated diamonds;Journal of Crystal Growth;1985-05

5. A proposed diamond polishing process;Philosophical Magazine A;1983-02

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