Variable temperature hall effect on p-Hg1−xCdxTe grown on CdTe and sapphire substrates by liquid phase epitaxy-Reference-Cited by-同舟云学术

Variable temperature hall effect on p-Hg1−xCdxTe grown on CdTe and sapphire substrates by liquid phase epitaxy

Published:1985-05 Issue:3 Volume:14 Page:245-268
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Edwall D. D.,Gertner E. R.,Tennant W. E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02661221.pdf

Reference11 articles.

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3. S.H. Shin, M. Chu, A.H.B. Vanderwyck, M. Lanir and C.C. Wang, J. Appl. Phys.51, 3772 (1980).

4. M. Chu, J. Appl. Phys.51, 5876 (1980).

5. R.E. Starr, P.E. Herning, M.H. Kalisher and R.J. Carralejo, “Growth of HgCdTe by LPE for 4.6 Μm PV Applications,” final report for Sept. 1978-May 1982 (1982).

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