On the form of 1-D nonlinear Poisson’s equation and the concept of neutralization voltage for non-uniformly doped MOSFETs-Reference-Cited by-同舟云学术

On the form of 1-D nonlinear Poisson’s equation and the concept of neutralization voltage for non-uniformly doped MOSFETs

Published:2017-11-13 Issue:1 Volume:17 Page:211-216
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Hong Chuyang,Kuo James B.,Chen Yijian

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province, China

Shenzhen City’s Strategic Development Fund for Fundamental Research

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s10825-017-1112-6/fulltext.html

Reference24 articles.

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3. Taur, Y., Chen, H.-P., Wang, W., Lo, S.-H., Wann, C.: On–off charge–voltage characteristics and dopant number fluctuation effects in junctionless double-gate MOSFETs. IEEE Trans. Electron. Devices 59(3), 863–866 (2012)

4. Duarte, J.P., Choi, S.-J., Moon, D.-I., Choi, Y.-K.: Simple analytical bulk current model for long-channel double-gate junctionless transistors. IEEE Electron. Device Lett. 32(6), 704–706 (2011)

5. Chen, Z., Xiao, Y., Tang, M., Xiong, Y., Huang, J., Li, J., Gu, X., Zhou, Y.: Surface-potential-based drain current model for long-channel junctionless double-gate MOSFETs. IEEE Trans. Electron. Devices 59(12), 3292–3298 (2012)