Author:
Nguyen C. D.,Pham A. T.,Jungemann C.,Meinerzhagen B.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. M.J. Hargrove et al., “Quantum mechanical modeling of the charge distribution in a Si/Si1−x Gex/Si P-channel MOSFET,” IEDM Tech. Dig., 735 (1994).
2. T. Vogelsang et al., “Electron transport in strained Si layers on Si1−xGex substrates,” Appl. Phys. Lett., 63, 1234 (1995).
3. J. Welser et al., “Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors,” IEEE Electron Device Lett., 15(3), 100 (1994).
4. K. Rim et al., “Fabrication and analysis of deep submicron Strained-Si N-MOSFET’s,” IEEE Trans. Electron Devices, 47(7), 1406 (2000).
5. A. Wettstein et al., “Quantum device-simulation with the density-gradient model on unstructured grids,” IEEE Trans. Electron Devices, 48(2), 279 (2001).
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