Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)-Reference-Cited by-同舟云学术

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Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)

Published:2011-05-05 Issue:1-2 Volume:10 Page:248-257
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

García-Ramírez Mario A.,Tsuchiya Yoshishige,Mizuta Hiroshi

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-011-0361-z.pdf

Reference32 articles.

1. International Technology Roadmap for Semiconductors. ITRS-2009 Edition. http://www.itrs.net/Links/2009ITRS/Home2009.htm (2009)

2. Tsu, R., Esaky, L.: Appl. Phys. Lett. 22, 562 (1973)

3. Groeseneken, G., Maes, H., Van Houdt, J., Witters, J.: In: Nonvolatile Semiconductor Memory Technology, pp. 1–88 (1971)

4. Frohman-Bentchkowsky, D.: In: IEDM-81, pp. 14–17 (1981)

5. Tiwari, S., Rana, F., Chan, K., Hanafi, H., Chan, W., Buchanan, D.: In: IEDM, pp. 521–524. IEEE Press, New York (1995)

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2. NEMS Devices;Nanoscale Silicon Devices;2015-12-10

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