Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Shahidi, G.G.: SOI technology for the GHz era, IBM J. Res. & Dev. 46 (2/3), 121 (2002)
2. Rafi, J.M., Simoen, E., Mercha, A., Campabadal, F.: Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs, Claeys, C. Solid-State Electr. 49, 1536 (2005)
3. Cartier, E., Fischetti, M.V., Eklund, E.A., McFeely, F.R.: Impact ionization in silicon. Appl. Phys. Lett. 62, 3339 (1993)
4. Fischetti, M.V., Sano, N., Laux, S.E., Natori, K.: Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs. IEEE J. TCAD 3 (1997)
5. Bufler, F.M.: Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe, Herbert Utz Verlag (1998)
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