Author:
Pratap Yogesh,Kumar Manoj,Kabra Sneha,Haldar Subhasis,Gupta R. S.,Gupta Mridula
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Wong, H.S.P.: Beyond the conventional MOSFET. In: Proceeding of 31th European Solid State Device Research Conference, p. 69 (2011)
2. Lion, Y.B., Chaing, M.H., Damrongplasit, N., Hsu, W.C., Liu, T.J.K.: Design of gate-all-around silicon MOSFETs for 6-T SRAM area efficients and yield. IEEE Trans. Electron Devices 61(7), 2371–2377 (2014)
3. Kaushal, G., Manhas, S.K., Maheshwaram, S., Anand, B., Dasgupta, S., Singh, N.: Novel design methodology using LEXT sizing in nanowire CMOS logic. IEEE Trans. Electron Devices 13(4), 650–658 (2014)
4. Lee, C., Zhuang, Y., Di, S., Han, R.: Subthreshold behavior models for nanoscale short-channel junctionless cylindrical surrounding-gate MOSFETs. IEEE Electron Device Lett. 60(11), 3655–3662 (2013)
5. Nayak, K., Bajaj, M., Konar, A., Oldiges, P.J., Natori, K., Iwani, H., Murli, K.V.R.M., Rao, V.R.: CMOS logic device and circuit performance of Si gate all around nanowire MOSFET. IEEE Trans. Electron Devices 61(9), 3066–3074 (2014)
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58 articles.
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