InP series-like transferred electron device for CW submillimeter-wave power sources

Author:

Dalle Christophe

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Eisele, H.: Active two-terminal devices for terahertz power generation by multiplication. In: Miles, R. E., Harrison, P., Lippens, D. (eds.) Terahertz Sources and Systems. NATO Science Series (Series II: Mathematics, Physics and Chemistry), vol 27. Springer, Dordrecht, pp 69–86 (2001)

2. Dalle, C., Rolland, P.A., Lleti, G.: Flat doping profile double-drift silicon IMPATT for reliable CW high power high efficiency generation in the 94 GHz window. IEEE Trans. Electron Devices 37(1), 227–236 (1990)

3. Friscourt, M. R.: Contribution à l’étude des dispositifs à tranfert électroniques en gamme millimétrique. Thèse de docteur-ingénieur, Université de Lille1, Avril (1982)

4. Eisele, H., Kamoua, R.: Submillimeter-wave InP Gunn devices. IEEE Trans. Microw. Theory Tech. 52(7), 2371–2378 (2004)

5. Judashke, R.: Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz. IEEE Trans. Microw. Theory Tech. 48(4), 719–724 (2000)

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