Band structure of molybdenum disulfide: from first principle to analytical band model-Reference-Cited by-同舟云学术

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Band structure of molybdenum disulfide: from first principle to analytical band model

Published:2022-04-25 Issue:3 Volume:21 Page:571-581
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Yang Cheng-Hsien,Chung Yun-Fang,Su Yen-Shuo,Chen Kuan-Ting,Huang Yi-Sheng,Chang Shu-Tong

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10825-022-01880-2.pdf

Reference20 articles.

1. IRDS 2020 version, the official website: https://irds.ieee.org/editions/2020

2. Wang, Q.H., Kalantar-Zadeh, K., Kis, A., Coleman, J.N., Strano, M.S.: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699 (2011). https://doi.org/10.1038/nnano.2012.193

3. Li, L.K., Yu, Y.J., Ye, G.J., Ge, Q.Q., Ou, X.D., Wu, H., Feng, D.L., Chen, X.H., Zhang, Y.B.: Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372 (2014). https://doi.org/10.1038/nnano.2014.35

4. Chen, K.-T., Hsieh, M.-H., Yen-Shuo, Su., Lee, W.-J., Chang, S.-T.: Carrier mobility calculation for monolayer black phosphorous. J. Nanosci. Nanotechnol. 19, 6821–6825 (2019). https://doi.org/10.1166/jnn.2019.17126

5. Chou, A.S., Shen, P.C., Cheng, C.C., Lu, L.S., Chueh, W.C., Li, M.Y., Pitner, G., Chang, W.H., Wu, C.I., Kong, J., Li, L.J., Philip Wong, H.S.: High on-current 2D nFET of 390 µA/µm at VDS = 1V using monolayer CVD MoS2 without intentional doping. In: Symposium on VLSI Technology, Honolulu, HI, paper TN1.7, June 15–19, 2020. https://doi.org/10.1109/VLSITechnology18217.2020.9265040

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