A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability

Author:

Kufluoglu Haldun,Alam Muhammad Ashraful

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. V. Huard et al., “Hole trapping effect on methodology for DC and AC negative bias temperature instability measurments in PMOS transistors,” IEEE IRPS, 2004, p. 40.

2. S. Mahapatra et al., “A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique,” TED, 47(1), 171 (2000).

3. K.O. Jeppson et al., “Negative bias of MOS devices at high electric fields and degradation of MNOS devices,” JAP, 48, 1977 (2004).

4. M.A. Alam, “A critical examination of the mechanics of dynamic NBTI for PMOSFETs,” IEDM Technical Digest, 345, (Dec. 2003).

5. H. Kufluoglu et al., “A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETS,” IEDM Technical Digest. IEEE International 13–15 Dec. 2004, 113–116.

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