Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Author:

Hung Nguyen Viet,Saint-Martin Jérôme,Querlioz Damien,Mazzamuto Fulvio,Bournel Arnaud,Niquet Yann-Michel,Dollfus Philippe

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Mizuta, H., Tanoue, T.: The Physics and Application of Resonant Tunnelling Diodes. Cambridge University Press, Cambridge (1995)

2. Katsnelson, M.I., Novoselov, K.S., Geim, A.K.: Chiral tunnelling and the Klein paradox in graphene. Nat. Phys. 2, 620–625 (2006)

3. Schwierz, F.: Graphene transistors. Nat. Nanotechnol. 5, 487–496 (2010)

4. Cresti, A., Grosso, G., Parravicini, G.P.: Valley-valve effect and even-odd chain parity in p-n graphene junctions. Phys. Rev. B 77, 233402 (2008)

5. Wang, Z.F., Li, Q., Shi, Q.W., Wang, X., Yang, J., Hou, J.G., Chen, J.: Chiral selective tunneling induced negative differential resistance in zigzag graphene nanoribbon: a theoretical study. Appl. Phys. Lett. 92, 133114 (2008)

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