Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Lake, R., Klimeck, G., Bowen, R.C., Jovanovic, D.: Single and multiband modeling of quantum electron transport through layered semiconductor devices. J. Appl. Phys. 81(12), 7845–7869 (1997)
2. Strahberger, C., Vogl, P.: Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures. Phys. Rev. B 62, 7289–7297 (2000)
3. Boykin, T.B., van der Wagt, J.P.A., Harris, J.S.: Tight-binding model for GaAs/alas resonant-tunneling diodes. Phys. Rev. B 43, 4777–4784 (1991)
4. Støvneng, J.A., Lipavský, P.: Multiband tight-binding approach to tunneling in semiconductor heterostructures: application to γX transfer in GaAs. Phys. Rev. B 49, 16494–16504 (1994)
5. Di Carlo, A.: Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation. Semicond. Sci. Technol. 18(1), R1 (2003)
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