3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory-Reference-Cited by-同舟云学术

3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory

Published:2006-12-09 Issue:1-3 Volume:6 Page:191-194
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Lisieri M.,Fiori G.,Iannaccone G.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-006-0110-x.pdf

Reference11 articles.

1. Friesen, M., et al.: Practical design and simulation of silicon-based quantum-dot qubits. Phys. Rev. B 67, 121301-1-4 (2003)

2. Ladd, T.D., et al.: All-silicon quantum computer. Phys. Rev. Lett. 89, 017901-1-4 (2002)

3. Friesen, M., Tahan, C., Joynt, R., Eriksson, M.A.: Spin readout and initialization in a semiconductor quantum dot. Phys. Rev. B 92, 037901-1-4 (2004)

4. Das Sarma, S., Fabian, J., Hu, X., Žutić, I.: Theoretical perspective on spintronics and spin-polarized transport. IEEE Trans. Magn. 36, 2821 (2000)

5. Pala, M.G., Governale, M., Kig, J., Zlicke, U., Iannaccone, G.: Two-dimensional hole precession in an all-semiconductor spin field effect transistor. Phys. Rev. B 69, 045304-1-9 (2004)

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