A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs

Author:

Afzalian Aryan,Akhavan Nima Dehdashti,Lee Chi-Woo,Yan Ran,Ferain Isabelle,Razavi Pedram,Colinge Jean-Pierre

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Colinge, J.P. (ed.): FinFETs and Other Multi-Gate Transistors. Springer, Berlin (2007)

2. Datta, S.: Nanoscale device modeling: the Green’s function method. Superlattices Microstruct. 28(4), 253–278 (2000)

3. Wang, J., Polizzi, E., Lundstrom, M.: A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation. J. Appl. Phys. 96(4), 2192–2203 (2004)

4. Bescond, M., Néhari, K., Autran, J.L., Cavassilas, N., Munteanu, D., Lannoo, M.: 3D quantum modeling and simulation of multi-gate nanowire MOSFETs. In: Proceedings of the 50th IEEE International Electron Device Meeting, pp. 617–620, 2004

5. Shao, X., Yu, Z.: Nanoscale FinFET simulation: A quasi-3D quantum mechanical model using NEGF. Solid-State Electron. 49, 1435–1445 (2005)

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