Correction to: Analytical modeling and simulation of a fully depleted three-gate silicon MESFET on SOI material
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Published:2019-03
Issue:1
Volume:18
Page:103-103
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ISSN:1569-8025
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Container-title:Journal of Computational Electronics
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language:en
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Short-container-title:J Comput Electron
Author:
Mohammadi Hossein,Abdullah Huda,Chang Fu Dee,Menon P. Susthitha,Sadegh Amiri Iraj
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials