Structural, electrical and optical properties of $$\hbox {InGaZnO}_{4}$$ InGaZnO 4 and $$\hbox {In}_{29}\hbox {Sn}_{3}\hbox {O}_{48}$$ In 29 Sn 3 O 48 : a first-principles study-Reference-Cited by-同舟云学术

Structural, electrical and optical properties of $$\hbox {InGaZnO}_{4}$$ InGaZnO 4 and $$\hbox {In}_{29}\hbox {Sn}_{3}\hbox {O}_{48}$$ In 29 Sn 3 O 48 : a first-principles study

Published:2017-03-24 Issue:2 Volume:16 Page:280-286
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Zhou Xiaolong,Cao Hanxing,Zhou Zhaobo,Cao Jianchun,Yu Jie

Funder

the National Nature Science Foundation of China

Innovation Team of Yunnan Province on Microstructure Calculation and Performance Study of Precious Material

the State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metal

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-017-0977-8.pdf

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5. Ishibashi, S., Higuchi, Y., Oka, Y., Nakamura, K.: Low resistivity indium-tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films. J. Vac. Sci. Technol. A 8, 1403–1406 (1990)

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