Analysis of tunneling currents in multilayer black phosphorous and $$\hbox {MoS}_{2}$$ MoS 2 non-volatile flash memory cells-Reference-Cited by-同舟云学术

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Analysis of tunneling currents in multilayer black phosphorous and $$\hbox {MoS}_{2}$$ MoS 2 non-volatile flash memory cells

Published:2015-09-28 Issue:1 Volume:15 Page:129-137
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Sharma Bikash,Mukhopadhyay Arnab,Sengupta Amretashis,Rahaman Hafizur,Sarkar C. K.

Funder

All India Council for Technical Education

Department of Science and Technology, Ministry of Science and Technology

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-015-0750-9.pdf

Reference34 articles.

1. Sengupta, A., et al.: Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor. J. Appl. Phys. 114, 194513 (2013). doi: 10.1063/1.4833554

2. Yoon, Y., Ganapathi, K., Salahuddin, S.: How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768 (2011)

3. Alam, K., Lake, R.K.: Monolayer transistors beyond the technology road map. IEEE Trans. Electron Devices 59, 3250 (2012)

4. Cai, Y., et al.: Layer-dependent band alignment and work function of few-layer phosphorene. Scientific Reports. doi: 10.1038/srep06677

5. Li, L., Yu, Y., Ye, G.J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X.H., Zhang, Y.: Black phosphorous field effect transistors. Nat. Nanotechnol. 9(5), 372–377 (2014). doi: 10.1038/NNANO.2014.35

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