Author:
Seoane N.,García-Loureiro A. J.,Kalna K.,Asenov A.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
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2. Seoane, N., García-Loureiro, A.J., Kalna, K., Asenov, A.: Discrete doping fluctuations in the delta layer of a 50 nm InP HEMT. In Proc. Workshop on Modeling and Simulation of Electron Devices, ed. by A. Campera, G. Fiori, G. Iannaccone, and M. Macucci, 78–79 (Pisa, Italy, 2005)
3. García-Loureiro, A.J., Kalna, K., Asenov, A.: Efficient three-dimensional parallel simulations of PHEMTs. Int. J. Numer. Model.-Electron. Netw. Device Fields 18, 327–340 (2005)
4. Markowich, P.A.: The stationary semiconductor device equations. Computational Microelectronics, Springer-Verlag (1986)
5. University of Tennessee, MPI: A message-passing interface Standard (1995)
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