Funder
Deutsche Forschungsgemeinschaft
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference105 articles.
1. Waser, R., Aono, M.: Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007)
2. Waser, R., Dittmann, R., Staikov, G., Szot, K.: Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009)
3. Yang, J.J., Strukov, D.B., Stewart, D.R.: Memristive devices for computing. Nat. Nanotechnol. 8, 13–24 (2012)
4. Hwang, C.S.: Prospective of semiconductor memory devices: from memory system to materials. Adv. Electron. Mater. 1, 1400056/1- (2015)
5. Ye, C., Wu, J., He, G., Zhang, J., Deng, T., He, P., Wang, H.: Physical mechanism and performance factors of metal oxide based resistive switching memory: a review. J. Mater. Sci. Technol. 32, 1–11 (2016)
Cited by
29 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献