Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. International Technology Roadmap for Semiconductors ( http://public.itrs.net/ )
2. Mistry, K., Armstrong, M., Auth, C., Cea, S., Coan, T., Ghani, T., Hoffmann, T., Murthy, A., Sandford, J., Shaheed, R., Zawadzki, K., Zhang, K., Thompson, S., Bohr, M.: Delaying forever: uniaxial strained silicon transistors in a 90 nm CMOS technology. Digest of Technical Papers, 2004 Symposium on VLSI Technology, pp. 50–51 (2004)
3. Yuang, M., et al.: Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics. IEEE Trans. Electron Devices 51(10), 1621–1626 (2004)
4. www.intel.com
5. Colinge, J.P.: Silicon-On-Insulator Technology: Materials to VLSI. Springer, Berlin (2012)
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献