Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes
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Published:2018-07-20
Issue:4
Volume:17
Page:1399-1409
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ISSN:1569-8025
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Container-title:Journal of Computational Electronics
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language:en
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Short-container-title:J Comput Electron
Author:
Liu JieORCID, Tang Chuanxiang, Mo Pinghui, Lu Jiwu
Funder
the Fundamental Research Funds for the Central Universities from Hunan University, Changsha, Hunan Province, People’s Republic of China
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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