Driftbeweglichkeitsprofile in GaAs-Feldeffekttransistoren
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,Applied Mathematics,Electrical and Electronic Engineering
Link
http://link.springer.com/content/pdf/10.1007/BF01578535.pdf
Reference37 articles.
1. Uchitomi, N.; Nagaoka, M.; Shimada, K.; Mizoguchi, T.; Toyoda, N.: Characterization of reactively sputtered WN x film as a gate metal for self-aligned GaAs metal semiconductor field effect transistors. J. Vac. Sci. Technol. B 4 (1986) 1392–1397
2. Steiner, K.; Mikami, H.; Nishihori, K.; Nagaoka, M.; Uchitomi, N.: WN x -Schottky diodes on semiconductor-insulator-semiconductor-like n-GaAs/undoped-AlGaAs/n-GaAs heterostructures. J. Vac. Sci. Technol. B 9 (1991) 1601–1604
3. Steiner, K.; Mikami, H.; Kitaura, Y.; Uchitomi, N.: Minimum-size effects in asymmetric tilt-angle implanted LDD-WN x -GaAs MESFET's. IEEE Trans. Electron Devices 38 (1991) 1730–1736
4. Steiner, K.; Mikami, H.; Uchitomi, N.; Toyoda, N.: Mobility profiles in short and narrow GaAs MESFET channels. IEEE Trans. Electron Devices 38 (1991) 23–27
5. Sze, S. M.: Physics of semiconductor devices. John Wiley & Sons, New York 1981
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