Preparation and properties of ternary II–IV–V2 layers and heterojunctions based on them-Reference-Cited by-同舟云学术

Preparation and properties of ternary II–IV–V2 layers and heterojunctions based on them

Published:1973-02 Issue:1 Volume:33 Page:1-15
ISSN:0001-6705
Container-title:Acta Physica Academiae Scientiarum Hungaricae
language:en
Short-container-title:Acta Physica

Author:

Valov Yu. A.,Goryunova N. A.,Leonov E. I.,Orlov V. M.

Publisher

Springer Science and Business Media LLC

Subject

Nuclear and High Energy Physics

Link

http://link.springer.com/content/pdf/10.1007/BF03161265.pdf

Reference10 articles.

1. B. Ray, J. Materials Science,2, 284, 1967.

2. A. S. Borshchevskii, N. A. Goryunova, F. P. Kesamanly andD. N. Nasledova, IX. Int. Conf. on the Physics of Semiconductors Moscow, 1968, Proceeding, V. II, p. 1198, “Nauka”, Leningrad, 1968.

3. Yu. A. Valov: New III-IV-V2 Diamondlike Semiconductors (in Russian), The State Committee of Standards, Moscow, 1971.

4. A. J. Spring-Thorpe, R. J. Harvey andB. R. Pamplin, J. Crystal Growth,6, 104, 1969.

5. N. A. Goryunova, A. V. Anshon, I. A. Karpovich, E. I. Leonov andV. M. Orlov, Phys. Stat. Sol. (a)2, 117, 1970.

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