Semiconducting structures and devices based on gallium arsenide with deep centers-Reference-Cited by-同舟云学术

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Semiconducting structures and devices based on gallium arsenide with deep centers

Published:1992-09 Issue:9 Volume:35 Page:806-814
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Khludkov S. S.,Tolbanov O. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00560054.pdf

Reference39 articles.

1. S. S. Khludkov, Izv. Vyssh. Uchebn., Zaved. Fiz., No. 10, 67 (1983).

2. S. S. Khludkov, G. L. Prikhodko, and T. A. Karelina, Izv. Akad. Nauk SSSR, Neorg. Mater.,8, No. 6, 1044 (1972).

3. S. S. Khludkov and N. V. Chaldysheva, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 5, 115 (1982).

4. S. S. Khludkov and A. V. Koretskii, Izv. Akad. Nauk SSSR, Neorg. Mater.21, No. 10, 1628 (1985).

5. M. D. Vilisova, G. M. Ikonnikov, O. P. Tolbanov, and S. S. Khludkov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 11, 3 (1981).

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1. Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity;IEEE Transactions on Electron Devices;2021-01

2. The Mechanism of Superfast Switching of Avalanche ${S}$ -Diodes Based on GaAs Doped With Cr and Fe;IEEE Transactions on Electron Devices;2018-08

3. GaAs structures for X-ray imaging detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-06

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