Mechanism of collection of non-equilibrium charge carriers in the presence of ionization losses in π-ν-n-structures based on GaAs-Reference-Cited by-同舟云学术

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Mechanism of collection of non-equilibrium charge carriers in the presence of ionization losses in π-ν-n-structures based on GaAs

Published:1999-03 Issue:3 Volume:42 Page:269-272
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Okaevitch L. S.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF02508305.pdf

Reference21 articles.

1. K. M. Smith, in: Proc. of the 4th Intern. Workshop on GaAs Detectors and Related Compounds, Aberfole, Scotland, (1996), p. 156.

2. K. M. Smith and S. D'Auria, in: Proc. of the 4th Intern. Workshop on GaAs Detectors and Related Compounds, del Friuli Italy (1997), p. 160.

3. K. Berkwick et al., in: Mater. Res. Soc. Symp. Proc,302, (1993), p. 363

4. K. Berkwick et al., in: Proc. of the 5th Int. Conf. Defect Recognition and Image Processing in Semiconductor Devices, Santander, Spain, 1993 (Institute of Phys. Conf.-London, 1994), p. 306.

5. C. del Papa and S D'Auria, in: Proc. of the 20th Eloisatron Workshop on GaAs Detectors and Electronics for HEP, Singapore (1993), p. 346.

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