Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena-Reference-Cited by-同舟云学术

Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena

Published:1991 Issue:7 Volume:23 Page:S863-S881
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Tan T. Y.,Yu S.,G�sele U.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF00624976.pdf

Reference72 articles.

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2. A. F. W. Willoughby, in ?Defects in Semiconductor II?, edited by S. Mahajan and J. W. Corbett, Materials Research Society Proceedings, Vol. 14 (North-Holland, New York, 1983) p. 237.

3. B. Tuck, ?Atomic Diffusion in III?V Semiconductors? (Adam Hilger, Bristol, 1988).

4. H. R. Winteler,Helv. Phys. Acta 44 (1970) 451.

5. W. D. Laidig, N. Holonyak, Jr, M. D. Camras, K. Hess, J. J. Colman, P. D. Dapkus andJ. Bardeen,Appl. Phys. Lett. 38 (1981) 776.

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