Author:
Chen Min,Liu Zuli,Wang Chuancong,Wang Yu,Yang Xinsheng,Yao Kailun
Publisher
Springer Science and Business Media LLC
Reference15 articles.
1. Xu, Y., Ferroelectric Materials and Their Applications, New York: North-Holland, 1991, 105–108.
2. Hong, S. H., Horn, A., Mckinstry, S. T. et al., Dielectric and ferro-electric properties of Ta-doped bismuth titanate, J. Mater., Sci. Lett., 2000, 19: 1661–1664.
3. Nagata, H., Chikushi, N., Takenka, T., Ferroelectric properties of Bismuth layer-structure compound SrxBi4−xTi3−xO12, Jpn. J. Appl. Phys., 1999, 38: 5497–5499.
4. Park, B. H., Kang, B. S., Bu, S. D. et al., Lanthanum-substituted bismuth titanate for use in non-volatile memories, Nature, 1999, 401: 682–684.
5. Lee, H. N., Hesse, D., Zakharov, N. et al., Ferroelectric Bi3.25La0.75Ti3O12 films of uniforms a-Axis orientation on silicon substrates, Science, 2002, 296: 2006–2008.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献