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Passivation of high-resistivity cadmium telluride by hydrogen implantation

  • Published:1987-05 Issue:1 Volume:43 Page:47-52
  • ISSN:0721-7250
  • Container-title:Applied Physics A Solids and Surfaces
  • language:en
  • Short-container-title:Appl. Phys. A

Author:

Biglari B.,Samimi M.,Hage-Ali M.,Siffert P.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of H2 Atmosphere Annealing on the Properties of CZT:In Single Crystals;Journal of Electronic Materials;2013-09-25

2. Doping;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

3. Binding energy of hydrogen–Cd vacancy complex in CdTe;Physics Letters A;2009-02

4. Photoluminescence and photoconductivity in hydrogen-passivated ZnTe;Semiconductor Science and Technology;1998-12-01

5. Behavior of Deep Defects After Hydrogen Passivation in Znte Studied by Photoluminescence and Photoconductivity;MRS Proceedings;1998-01
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