Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide-Reference-Cited by-同舟云学术

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Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

Published:1992-01 Issue:1 Volume:35 Page:51-52
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Ivonin I. V.,Krivolapov N. N.,Lavrent'eva L. G.,Porokhovnichenko L. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF01324985.pdf

Reference7 articles.

1. L. G. Lavrentieva, I. V. Ivonin, L. M. Krasilnikova, and M. D. Vilisova, Krist. Tech.,15, 683 (1980).

2. L. G. Lavrent'eva et al., in: Structure Defects in Semiconductors [in Russian], Nauka, Novosibirsk (1973), p. 50.

3. L. M. Krasil'nikova, N. N. Krivolapov, and M. R. Akhmetshin, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 2, 70 (1985).

4. N. N. Krivolapov, L. M. Krasil'nikova, and V. I. Kravtsov, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 10, 111 (1987).

5. L. G. Lavrent'eva, M. D. Vilisova, I. V. Ivonin, et al., Izv. Vyssh. Uchebn. Zaved. Fiz., No. 2, 63 (1973).

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