A study of excess noise in mos structures under quasiequilibrium conditions-Reference-Cited by-同舟云学术

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A study of excess noise in mos structures under quasiequilibrium conditions

Published:1991-04 Issue:4 Volume:34 Page:380-384
ISSN:0033-8443
Container-title:Radiophysics and Quantum Electronics
language:en
Short-container-title:Radiophys Quantum Electron

Author:

Zhigal'skii G. P.,Fedorov A. S.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Astronomy and Astrophysics,Nuclear and High Energy Physics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF01080775.pdf

Reference20 articles.

1. V. S. Pryanikov, Predicting Semiconductor Device Failures [in Russian], Énergiya, Moscow (1978).

2. K. S. Ralls, W. J. Skocpol, et al., Phys. Rev. Lett.,52, No. 4, 228 (1984).

3. K. Goser, Microelectron. Reliab.,28, No. 4, 605 (1988).

4. A. N. Malakhov, Radiotekh. Élektron.,4, No. 1, 54 (1959).

5. A. N. Malakhov, Radiotekh. Élektron.19, No. 11, 2436 (1974).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Noise as a Measure of Quality and Reliability in Electronic Devices;Advances in Electronics and Electron Physics Volume 87;1993

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