Method for contact resistivity measurements on highly phosphorus-doped silicon using a multiline transmission line model
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s40042-020-00048-0.pdf
Reference29 articles.
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3. K.D. Weeks, S.G. Thomas, P. Dholabhai, J. Adams, Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors. Thin Solid Films 520, 3158–3162 (2012). https://doi.org/10.1016/j.tsf.2011.10.107
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5. C.N. Ni, X. Li, S. Sharma, K.V. Rao, M. Jin, C. Lazik, V. Banthia, B. Colombeau, N. Variam, A. Mayur, H. Chung, R. Hung, A. Brand, Ultra-low contact resistivity with highly doped Si: P contact for nMOSFET. Dig. Tech. Pap. Symp. VLSI Technol. 2015, T118–T119 (2015). https://doi.org/10.1109/VLSIT.2015.7223711
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