Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells

Author:

Bae Jae-Young,Han Man-Hyup,Shim Tae-Hun,Park Jea-GunORCID

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Reference31 articles.

1. Garidis, K. Applications of Si1−xGex Alloys for Ge Devices and Monolithic 3D Integration, (2020)

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3. Mistry, K. et al. Introducing 14-Nm FinFET technology in microwind to cite this version : HAL Id : Hal-01541171 introducing 14-Nm FinFET technology in microwind. Proc. 49th Des. Autom. Conf. - DAC ’12, 37 637371 (2017).

4. Guo, D. et al. FINFET technology featuring high mobility SiGe channel for 10nm and beyond. Dig. Tech. Pap. - Symp. VLSI Technol., 2016-Septe (2016), doi:https://doi.org/10.1109/VLSIT.2016.7573360.

5. A. Razavieh et al., Challenges and limitations of CMOS scaling for FinFET and beyond architectures. IEEE Trans. Nanotechnol. 18, 999–1004 (2019). https://doi.org/10.1109/TNANO.2019.2942456

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