Kinetics and edge-growth effects of GaAs LPE layers grown in the Ga-As-Bi system-Reference-Cited by-同舟云学术

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Kinetics and edge-growth effects of GaAs LPE layers grown in the Ga-As-Bi system

Published:1986-11 Issue:11 Volume:21 Page:3977-3980
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Panek M.,Ratuszek M.,Tłaczała M.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF02431638.pdf

Reference13 articles.

1. N. B. Ganina, W. B. Ufimcev andW. I. Fistul,Pisma ZFT 8 (1982) 620.

2. Yu. E. Maroncuk, T. A. Polanskaya andN. A. Jakuseva,Izv. Akad. SSSR, Neorg. mater. 20 (1984) 13.

3. S. B. Evgenev andN. B. Ganina,ibid. 20 (1984) 561.

4. M. Hansen andK. Anderko, in “Struktury Dvoynych Splavov” (Metallurgizdat, Moscow, 1962) p. 173.

5. R. K. Willardson andW. P. Allred, in Proceedings of 1st International Symposium on gallium arsenide, Reading University (1966) p. 35.

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1. Control of the composition and the structural properties of GaAsSb layers, grown by liquid phase epitaxy, by Bi addition to the growth melt;Journal of Crystal Growth;2020-09

2. Ga0.97Mn0.03As epitaxial layers grown from Ga–Mn–As–Bi solutions by liquid-phase epitaxy;Materials Letters;2002-01

3. Investigations on the estimation of arsenic atoms and growth of GaAs epitaxial layers from bismuth solution;Materials Science and Engineering: B;1999-03

4. Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy;Japanese Journal of Applied Physics;1998-05-15

5. High Quality GaAs Epitaxial Layers Grown from Ga–As–Bi Solutions by Liquid Phase Epitaxy;Japanese Journal of Applied Physics;1997-06-15

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