Flat-High-Gain Design and Noise Optimization in SiGe Low-Noise Amplifier for S–K Band Applications-Reference-Cited by-同舟云学术

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Flat-High-Gain Design and Noise Optimization in SiGe Low-Noise Amplifier for S–K Band Applications

Published:2021-01-03 Issue:6 Volume:40 Page:2720-2740
ISSN:0278-081X
Container-title:Circuits, Systems, and Signal Processing
language:en
Short-container-title:Circuits Syst Signal Process

Author:

Li Zhenrong^ORCID,Liu Boyu,Duan Yiming,Wang Zeyuan,Li Zhen,Zhuang Yiqi

Funder

Natural Science Basic Research Plan in Shaanxi province of China

Innovation Fund of Xidian University

Publisher

Springer Science and Business Media LLC

Subject

Applied Mathematics,Signal Processing

Link

https://link.springer.com/content/pdf/10.1007/s00034-020-01616-2.pdf

Reference27 articles.

1. S.G. Aarani, M. Hayati, A.H. Kazemi, A novel UWB low-noise amplifier design using double capacitor cross-coupled feedback. AEU Int. J. Electron. Commun. 2019(104), 1–9 (2019)

2. C. Caliskan, I. Kalyoncu, M. Yazici, Y. Gurbuz, Sub-1-dB and Wideband SiGe BiCMOS Low-Noise Amplifiers for X-Band Applications. IEEE Trans. Circuits Syst. I Regul Pap. 66(4), 1419–1430 (2019)

3. H. Chen, Y. Lin, S. Lu, Analysis and Design of a 1.6–28-GHz Compact Wideband LNA in 90-nm CMOS Using a π-Match Input Network. IEEE Trans. Microw. Theory. Tech. 58(8), 2092–2104 (2010)

4. C.C. Chen, Y.C. Wang, A 2.4/5.2/5.8 GHz Triple-Band Common-Gate Cascode CMOS Low-Noise Amplifier. Circuits Syst. Signal Process. 36, 3477–3490 (2017)

5. K. Chien, H. Chiou, A 0.6–6.2 GHz wideband LNA using resistive feedback and gate inductive peaking techniques for multiple standards application. in 2013 Asia-Pacific Microwave Conference Proceedings (APMC) (IEEE, 2013), pp. 688–90

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