Laser annealing of semiconductors-Reference-Cited by-同舟云学术

Laser annealing of semiconductors

Published: Issue: Volume: Page:229-257
ISSN:
Container-title:Advances in Solid State Physics
language:
Short-container-title:

Author:

Rozgonyi George A.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/BFb0116744.pdf

Reference65 articles.

1. J. M. Fairfield and G. H. Schwuttke, Solid State Elec. 11, 1175 (1968), F. E. Harper and M. I. Cohen, Solid State Elec. 13, 1103 (1969).

2. I. B. Khaibullin, E. I. Shtyrkov M. M. Zaripov, R. M. Bayazitov and M. F. Galjautdinov, Radiation Effects 36, 225 (1978) and references therein.

3. G. Foti, E. Rimini, G. Vitali, M. Bertolotti, Appl. Phys. 14, 189 (1977).

4. S. D. Ferris, H. J. Leamy and J. M. Poate (Eds.), Laser-Solid Interactions and Laser Processing of Electronic Materials, The Electrochemical Society, Princeton, N. J. Vol. 80–1.

5. C. L. Anderson, G. K. Keller and G. A. Rozgonyi (Eds.), Laser and Electron Beam Processing of Electronic Materials, The Electrochemical Society, Princeton, N. J. (1979)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transformation of amorphous Si0.9Ge0.1 and Si films by laser annealing;Thin Solid Films;1995-09

2. Laserinduzierte Prozesse in kondensierter Materie;Laser in Technik und Forschung;1993

3. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991

4. Modification of silicon properties with lasers, electron beams, and incoherent light;Critical Reviews in Solid State and Materials Sciences;1984-01

5. Ultrashort laser-pulse annealing of hydrogenated amorphous silicon;Applied Physics A Solids and Surfaces;1981-09